050-7400 rev e 9-2005 apt30gp60b apt30gp60s 600v a new generation of high voltage power igbts. using punch-through technology and a proprietary metal gate, this igbt has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. in many cases, the power mos 7 ? igbt provides a lower cost alternative to a power mosfet. ? low conduction loss ? 100 khz operation @ 400v, 37a ? low gate charge ? 200 khz operation @ 400v, 24a ? ultrafast tail current shutoff ? ssoa rated maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 600 3 4.5 6 2.2 2.7 2.1 250 2500 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 250a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm ssoa p d t j ,t stg t l apt30gp60b_s 600 20 30 100 49 120 120a @ 600v 463 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 25c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. g c e power mos 7 ? igbt t o - 2 4 7 g c e d 3 pak g c e b s
050-7400 rev e 9-2005 apt30gp60b_s dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 30a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc (peak) = 400v v ge = 15v i c = 30a r g = 5 ? t j = +25c inductive switching (125c) v cc (peak) = 400v v ge = 15v i c = 30a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching soa turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 min typ max 3200 295 20 7.5 90 20 30 120 13 18 55 46 260 335 250 330 13 18 84 80 260 508 518 750 unit pf v nc a ns j ns j unit c/w gm min typ max .27 n/a 5.90 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein.
050-7400 rev e 9-2005 t j = 25c. 250s pulse test <0.5 % duty cycle typical preformance curves t c =-55c t c =125c t c =25c v ce =480v v ce =300v v ce =120v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 25c t j = -55c t j = 125c t c =-55c t c =25c t c =125c 250s pulse test <0.5 % duty cycle i c = 30a t j = 25c bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) apt30gp60b v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction trmperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature 60 50 40 30 20 10 0 16 14 12 10 8 6 4 2 0 3.5 3 2.5 2 1.5 1 0.5 0 140 120 100 80 60 40 20 0 i c = 60a i c = 30a i c = 15a i c = 60a i c = 30a i c = 15a 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 0 10 20 30 40 50 60 70 80 90 100 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 60 50 40 30 20 10 0 200 180 160 140 120 100 80 60 40 20 0 4 3.5 3 2.5 2 1.5 1 0.5 0 1.2 1.15 1.10 1.05 1.0 0.95 0.90 0.85 0.8
050-7400 rev e 9-2005 apt30gp60b_s t j = 125c, v ge = 10v or 15v v ce = 400v r g = 5 ? l = 100 h v ge = 15v v ge = 10v v ge =15v,t j =125c v ce = 400v t j = 25c, t j =125c r g = 5 ? l = 100 h r g = 5 ? , l = 100 h, v ce = 400v r g = 5 ? , l = 100 h, v ce = 400v i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 0 102030405060 0 25 50 75 100 125 v ge =10v,t j =125c v ge =15v,t j =25c v ge =10v,t j =25c t j = 25c, v ge = 10v or 15v 100 90 80 70 60 50 40 30 20 10 0 100 80 60 40 20 0 1400 1200 1000 800 600 400 200 0 1600 1200 800 400 0 t j = 125c, v ge = 10v or 15v v ce = 400v v ge = +15v r g = 5 ? v ce = 400v v ge = +15v r g = 5 ? v ce = 400v v ge = +15v r g = 5 ? e on2, 60a e off, 60a e on2, 30a e off, 30a e on2, 15a e off, 15a e on2, 60a e off, 60a e on2, 30a e off, 30a e on2, 15a e off, 15a v ce = 400v v ge = +15v t j = 125 c t j = 125c,v ge = 10v t j = 125c,v ge = 15v t j = 25c,v ge = 10v t j = 25c, v ge = 10v or 15v t j = 25c,v ge = 15v 25 20 15 10 5 0 50 40 30 20 10 0 1400 1200 1000 800 600 400 200 0 2500 2000 1500 1000 500 0 t j = 25 or 125c,v ge = 15v t j = 25 or 125c,v ge = 10v
050-7400 rev e 9-2005 300 100 50 10 0102030405060 10,000 5,000 1,000 500 100 50 10 5 0 140 120 100 80 60 40 20 0 c, capacitance ( p f) i c , collector current (a) f max , operating frequency (khz) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 i c , collector current (a) figure 20, operating frequency vs collector current c res c ies c oes typical preformance curves t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 5 ? apt30gp60b max max1 max 2 max 1 d(on) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = 0.30 0.25 0.20 0.15 0.10 0.05 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 figure 19b, transient thermal impedance model 0.0196 0.107 0.144 0.00500f 0.0132f 0.135f power (watts) junction temp. ( ?c) rc model case temperature
050-7400 rev e 9-2005 apt30gp60b_s figure 22, turn-on switching waveforms and definitions 10 % 5 % 10% t d(on) t r 90% 5 % gate voltage collector voltage collector current switching energy t j = 125 c figure 23, turn-off switching waveforms and definitions t j = 125 c collector current collector voltage gate voltage 90% 90% t f t d(off) 0 10% switching energy apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit i c a d.u.t. apt15df60 v ce figure 21, inductive switching test circuit v cc 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) 0.56 (.022) dimensions in millimeters (inches) heat sink (collector) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) collector (heat sink) 1.98 (.078) 2.08 (.082) gate collector emitter 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/18/95 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline d 3 pak package outline
|
